Bantval Jayant Baliga (born (1948-04-28)28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).[1][2]

In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology.

Career

Baliga grew up in Jalahalli, a small village near Bangalore, India. His father, Bantwal Vittal Manjunath Baliga, was one of India's first electrical engineers in the days before independence and founding President of the Indian branch of the Institute of Radio Engineers, which later became the IEEE in India. Baliga's father played pivotal roles in the founding of Indian television and electronics industries.[1][3]

Jayant received his B.Tech in Electrical Engineering from the Indian Institute of Technology, Madras, in 1969, and his MS (1971) and PhD (1974) in Electrical Engineering from the Rensselaer Polytechnic Institute.[1]

He worked 15 years at the General Electric Research and Development Center in Schenectady, New York, then joined North Carolina State University in 1988 as a Full Professor. He was promoted to Distinguished University Professor in 1997. His invention insulated gate bipolar transistor that combines sciences from two streams Electronics engineering and Electrical engineering. This has resulted in cost savings of over $15 trillion for consumers, and is forming a basis for smart grid. Baliga then worked in academic field. He also founded three companies that made products based on semiconductor technologies.[3][4][5]

Recognition

References

  1. ^ a b c Edwards, John (22 November 2010). "B. Jayant Baliga: Designing The Insulated-Gate Bipolar Transistor". Electronic Design. Retrieved 16 January 2017.
  2. ^ a b "NIHF Inductee Bantval Jayant Baliga Invented IGBT Technology". National Inventors Hall of Fame. Retrieved 17 August 2019.
  3. ^ a b c Prasad, Shishir (25 February 2012). "Jayant Baliga's invention is a power saver". Forbes India. Retrieved 16 January 2017.
  4. ^ a b Desikan, Shubashree (21 August 2016). "Man with a huge 'negative' carbon footprint". The Hindu. Retrieved 16 January 2017.
  5. ^ a b Pulakkat, Hari (28 July 2016). "Meet Jayant Baliga - the inventor of IGBT who is working to kill his own invention". The Economic Times. Retrieved 16 January 2017.
  6. ^ "Fellow Class of 1983". IEEE. Retrieved 25 January 2012.
  7. ^ "IEEE Lamme Medal Recipients" (PDF). IEEE. Retrieved 25 January 2012.
  8. ^ a b "Dr. Jayant Baliga". North Carolina State University. Retrieved 16 January 2017.
  9. ^ Zorpette, Glenn (1997). Rennie, John (ed.). "Fifty Years of Heroes and Epiphanies". Scientific American. 8 (1): 7. ISSN 1048-0943. Retrieved 16 January 2017. And it may not be too soon to identify a few new candidates for hero status—people such as the quantum-well wizard Federico Capasso of Lucent Technologies (which includes Bell Labs) and B. Jayant Baliga, the inventor of the IGBT, who describes his transistor in this issue
  10. ^ President Obama Honors Nation’s Top Scientists and Innovators, 27 September 2011, The White House, Office of the Press Secretary, whitehouse.gov
  11. ^ "IEEE 2014 Medals and Awards Recipients". IEEE. Archived from the original on 24 February 2014. Retrieved 14 February 2014.
  12. ^ "2015". Global Energy Association. Retrieved 16 January 2017.
  13. ^ Allen, Frederick E. (6 May 2016). "The Man With The World's Largest Negative Carbon Footprint And 15 Other Geniuses Honored". Forbes. Retrieved 16 January 2017.
  14. ^ "IIT Madras 53rd Convocation". Archived from the original on 26 December 2016. Retrieved 21 July 2016.

Further reading

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