NiSi
Identifiers
3D model (JSmol)
ChemSpider
  • InChI=1S/Ni.Si
    Key: PEUPIGGLJVUNEU-UHFFFAOYSA-N
  • [Si].[Ni]
Properties
NiSi
Molar mass 86.778 g/mol
Melting point 1,000 °C; 1,832 °F; 1,273 K[2]
−0.3×10−6 emu/g[1]
Structure[3]
Orthorhombic, oP8
Pnma, No. 62
a = 0.519 nm, b = 0.333 nm, c = 0.5628 nm
4
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Nickel monosilicide is an intermetallic compound formed out of nickel and silicon. Like other nickel silicides, NiSi is of importance in the area of microelectronics.

Preparation

Nickel monosilicide can be prepared by depositing a nickel layer on silicon and subsequent annealing. In the case of Ni films with thicknesses above 4 nm, the normal phase transition is given by Ni2Si at 250 °C followed by NiSi at 350 °C and NiSi2 at approximately 800 °C.[4] For films with an initial Ni thickness below 4 nm a direct transition from orthorhombic Ni2Si to epitaxial NiSi2−x, skipping the nickel monosilicide phase, is observed.[5]

Uses

Several properties make NiSi an important local contact material in the area of microelectronics, among them a reduced thermal budget, low resistivity of 13–14 μΩ·cm and a reduced Si consumption when compared to alternative compounds.[6]

References

  1. ^ Shinoda, Daizaburo; Asanabe, Sizuo (1966). "Magnetic Properties of Silicides of Iron Group Transition Elements". Journal of the Physical Society of Japan. 21 (3): 555. Bibcode:1966JPSJ...21..555S. doi:10.1143/JPSJ.21.555.
  2. ^ Gas, P.; d’Heurle, F. M. (1998). "Diffusion in silicides". In Beke, D. L. (ed.). Landolt-Börnstein - Group III Condensed Matter. Vol. 33A. Springer. pp. 1–38. doi:10.1007/10426818_13. ISBN 3-540-60964-4.
  3. ^ Wopersnow W., Schubert K. (1976) Z. Metallkd., 67, 807–810
  4. ^ d'Heurle, F. M.; Gas, P. (February 1986). "Kinetics of formation of silicides: A review". Journal of Materials Research. 1 (1): 205–221. Bibcode:1986JMatR...1..205D. doi:10.1557/JMR.1986.0205. S2CID 135724287.
  5. ^ Wolf, Philipp M.; Pitthan, Eduardo; Zhang, Zhen; Lavoie, Christian; Tran, Tuan T.; Primetzhofer, Daniel (2022-02-21). "Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In Situ Synthesis and Analysis". Small. 18 (14): 2106093. doi:10.1002/smll.202106093. ISSN 1613-6810. PMID 35191181. S2CID 247023770.
  6. ^ Lavoie, C.; d’Heurle, F.M.; Detavernier, C.; Cabral, C. (November 2003). "Towards implementation of a nickel silicide process for CMOS technologies". Microelectronic Engineering. 70 (2–4): 144–157. doi:10.1016/S0167-9317(03)00380-0.


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