Titanium disilicide[1]
Names
IUPAC name
Titanium disilicide
Other names
Titanium silicide
Identifiers
3D model (JSmol)
ECHA InfoCard 100.031.719 Edit this at Wikidata
EC Number
  • 234-904-3
  • InChI=1S/2Si.Ti
    Key: DFJQEGUNXWZVAH-UHFFFAOYSA-N
  • [Si]=[Ti]=[Si]
Properties
TiSi2
Molar mass 104.038 g/mol
Appearance black orthorhombic crystals
Density 4.02 g/cm3
Melting point 1,470 °C (2,680 °F; 1,740 K)
insoluble
Solubility soluble in HF
Hazards
GHS labelling:
GHS02: FlammableGHS07: Exclamation mark
Warning
H228, H315, H319, H335
P210, P240, P241, P261, P264, P271, P280, P302+P352, P304+P340, P305+P351+P338, P312, P321, P332+P313, P337+P313, P362, P370+P378, P403+P233, P405, P501
Safety data sheet (SDS) [1]
Related compounds
Other cations
 Zirconium disilicide
Hafnium disilicide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Titanium disilicide (TiSi2) is an inorganic chemical compound of titanium and silicon.

Preparation

Titanium disilicide can be obtained from the reaction between titanium or titanium hydride with silicon.[2]

Ti + 2 Si → TiSi2

It is also possible to prepare it aluminothermically by the ignition of aluminium powder, sulfur, silicon dioxide, and titanium dioxide or potassium hexafluorotitanate, K2TiF6, by electrolysis of a melt of potassium hexafluorotitanate and titanium dioxide, or by reaction of titanium with silicon tetrachloride.[2]

Another method is the reaction of titanium tetrachloride with silane, dichlorosilane or silicon.[3]

TiCl4 + 2 SiH4 → TiSi2 + 4 HCl + 2 H2
TiCl4 + 2 SiH2Cl2 + 2 H2 → TiSi2 + 8 HCl
TiCl4 + 3 Si → TiSi2 + SiCl4

Uses

Titanium silicide is used in the semiconductor industry. It is typically grown by means of salicide technology over silicon and polysilicon lines to reduce the sheet resistance of local transistors connections. In the microelectronic industry it is typically used in the C54 phase.

References

  1. ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, Florida: CRC Press, pp. 4–91, ISBN 0-8493-0594-2
  2. ^ a b Brauer, Georg (1978). Handbuch der Präparativen Anorganischen Chemie, Band II. Baudler, Marianne (3rd ed.). Stuttgart: Enke. p. 1389. ISBN 978-3-432-87813-3. OCLC 310719490.
  3. ^ Pierson, Hugh O. (1999). Handbook of Chemical Vapor Deposition : Principles, Technology, and Applications (2nd ed.). Norwich, N.Y.: Noyes Publications. p. 331. ISBN 1-59124-030-1. OCLC 49708617.
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