Semiconductor device fabrication |
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MOSFET scaling (process nodes) |
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Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes.
See also: MOSFET, Semiconductor device fabrication, and Transistor density |
Date | Channel length | Oxide thickness[1] | MOSFET logic | Researcher(s) | Organization | Ref |
---|---|---|---|---|---|---|
June 1960 | 20,000 nm | 100 nm | PMOS | Mohamed M. Atalla, Dawon Kahng | Bell Telephone Laboratories | [2][3] |
NMOS | ||||||
10,000 nm | 100 nm | PMOS | Mohamed M. Atalla, Dawon Kahng | Bell Telephone Laboratories | [4] | |
NMOS | ||||||
May 1965 | 8,000 nm | 150 nm | NMOS | Chih-Tang Sah, Otto Leistiko, A.S. Grove | Fairchild Semiconductor | [5] |
5,000 nm | 170 nm | PMOS | ||||
December 1972 | 1,000 nm | ? | PMOS | Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu | IBM T.J. Watson Research Center | [6][7][8] |
1973 | 7,500 nm | ? | NMOS | Sohichi Suzuki | NEC | [9][10] |
6,000 nm | ? | PMOS | ? | Toshiba | [11][12] | |
October 1974 | 1,000 nm | 35 nm | NMOS | Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu | IBM T.J. Watson Research Center | [13] |
500 nm | ||||||
September 1975 | 1,500 nm | 20 nm | NMOS | Ryoichi Hori, Hiroo Masuda, Osamu Minato | Hitachi | [7][14] |
March 1976 | 3,000 nm | ? | NMOS | ? | Intel | [15] |
April 1979 | 1,000 nm | 25 nm | NMOS | William R. Hunter, L. M. Ephrath, Alice Cramer | IBM T.J. Watson Research Center | [16] |
December 1984 | 100 nm | 5 nm | NMOS | Toshio Kobayashi, Seiji Horiguchi, K. Kiuchi | Nippon Telegraph and Telephone | [17] |
December 1985 | 150 nm | 2.5 nm | NMOS | Toshio Kobayashi, Seiji Horiguchi, M. Miyake, M. Oda | Nippon Telegraph and Telephone | [18] |
75 nm | ? | NMOS | Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis | MIT | [19] | |
January 1986 | 60 nm | ? | NMOS | Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis | MIT | [20] |
June 1987 | 200 nm | 3.5 nm | PMOS | Toshio Kobayashi, M. Miyake, K. Deguchi | Nippon Telegraph and Telephone | [21] |
December 1993 | 40 nm | ? | NMOS | Mizuki Ono, Masanobu Saito, Takashi Yoshitomi | Toshiba | [22] |
September 1996 | 16 nm | ? | PMOS | Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba | NEC | [23] |
June 1998 | 50 nm | 1.3 nm | NMOS | Khaled Z. Ahmed, Effiong E. Ibok, Miryeong Song | Advanced Micro Devices (AMD) | [24][25] |
December 2002 | 6 nm | ? | PMOS | Bruce Doris, Omer Dokumaci, Meikei Ieong | IBM | [26][27][28] |
December 2003 | 3 nm | ? | PMOS | Hitoshi Wakabayashi, Shigeharu Yamagami | NEC | [29][27] |
? | NMOS |
Date | Channel length | Oxide thickness[1] | Researcher(s) | Organization | Ref |
---|---|---|---|---|---|
February 1963 | ? | ? | Chih-Tang Sah, Frank Wanlass | Fairchild Semiconductor | [30][31] |
1968 | 20,000 nm | 100 nm | ? | RCA Laboratories | [32] |
1970 | 10,000 nm | 100 nm | ? | RCA Laboratories | [32] |
December 1976 | 2,000 nm | ? | A. Aitken, R.G. Poulsen, A.T.P. MacArthur, J.J. White | Mitel Semiconductor | [33] |
February 1978 | 3,000 nm | ? | Toshiaki Masuhara, Osamu Minato, Toshio Sasaki, Yoshio Sakai | Hitachi Central Research Laboratory | [34][35][36] |
February 1983 | 1,200 nm | 25 nm | R.J.C. Chwang, M. Choi, D. Creek, S. Stern, P.H. Pelley | Intel | [37][38] |
900 nm | 15 nm | Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima | Nippon Telegraph and Telephone (NTT) | [37][39] | |
December 1983 | 1,000 nm | 22.5 nm | G.J. Hu, Yuan Taur, Robert H. Dennard, Chung-Yu Ting | IBM T.J. Watson Research Center | [40] |
February 1987 | 800 nm | 17 nm | T. Sumi, Tsuneo Taniguchi, Mikio Kishimoto, Hiroshige Hirano | Matsushita | [37][41] |
700 nm | 12 nm | Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima | Nippon Telegraph and Telephone (NTT) | [37][42] | |
September 1987 | 500 nm | 12.5 nm | Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. Haddad | IBM T.J. Watson Research Center | [43] |
December 1987 | 250 nm | ? | Naoki Kasai, Nobuhiro Endo, Hiroshi Kitajima | NEC | [44] |
February 1988 | 400 nm | 10 nm | M. Inoue, H. Kotani, T. Yamada, Hiroyuki Yamauchi | Matsushita | [37][45] |
December 1990 | 100 nm | ? | Ghavam G. Shahidi, Bijan Davari, Yuan Taur, James D. Warnock | IBM T.J. Watson Research Center | [46] |
1993 | 350 nm | ? | ? | Sony | [47] |
1996 | 150 nm | ? | ? | Mitsubishi Electric | |
1998 | 180 nm | ? | ? | TSMC | [48] |
December 2003 | 5 nm | ? | Hitoshi Wakabayashi, Shigeharu Yamagami, Nobuyuki Ikezawa | NEC | [29][49] |
Date | Channel length | MuGFET type | Researcher(s) | Organization | Ref |
---|---|---|---|---|---|
August 1984 | ? | DGMOS | Toshihiro Sekigawa, Yutaka Hayashi | Electrotechnical Laboratory (ETL) | [50] |
1987 | 2,000 nm | DGMOS | Toshihiro Sekigawa | Electrotechnical Laboratory (ETL) | [51] |
December 1988 | 250 nm | DGMOS | Bijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. Oh | IBM T.J. Watson Research Center | [52][53] |
180 nm | |||||
? | GAAFET | Fujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. Okabe | Toshiba | [54][55][56] | |
December 1989 | 200 nm | FinFET | Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda | Hitachi Central Research Laboratory | [57][58][59] |
December 1998 | 17 nm | FinFET | Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor | University of California (Berkeley) | [60][61] |
2001 | 15 nm | FinFET | Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu | University of California (Berkeley) | [60][62] |
December 2002 | 10 nm | FinFET | Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor | University of California (Berkeley) | [60][63] |
June 2006 | 3 nm | GAAFET | Hyunjin Lee, Yang-kyu Choi, Lee-Eun Yu, Seong-Wan Ryu | KAIST | [64][65] |
Date | Channel length (nm) |
Oxide thickness (nm)[1] |
MOSFET type |
Researcher(s) | Organization | Ref |
---|---|---|---|---|---|---|
October 1962 | ? | ? | TFT | Paul K. Weimer | RCA Laboratories | [66][67] |
1965 | ? | ? | GaAs | H. Becke, R. Hall, J. White | RCA Laboratories | [68] |
October 1966 | 100,000 | 100 | TFT | T.P. Brody, H.E. Kunig | Westinghouse Electric | [69][70] |
August 1967 | ? | ? | FGMOS | Dawon Kahng, Simon Min Sze | Bell Telephone Laboratories | [71] |
October 1967 | ? | ? | MNOS | H.A. Richard Wegener, A.J. Lincoln, H.C. Pao | Sperry Corporation | [72] |
July 1968 | ? | ? | BiMOS | Hung-Chang Lin, Ramachandra R. Iyer | Westinghouse Electric | [73][74] |
October 1968 | ? | ? | BiCMOS | Hung-Chang Lin, Ramachandra R. Iyer, C.T. Ho | Westinghouse Electric | [75][74] |
1969 | ? | ? | VMOS | ? | Hitachi | [76][77] |
September 1969 | ? | ? | DMOS | Y. Tarui, Y. Hayashi, Toshihiro Sekigawa | Electrotechnical Laboratory (ETL) | [78][79] |
October 1970 | ? | ? | ISFET | Piet Bergveld | University of Twente | [80][81] |
October 1970 | 1000 | ? | DMOS | Y. Tarui, Y. Hayashi, Toshihiro Sekigawa | Electrotechnical Laboratory (ETL) | [82] |
1977 | ? | ? | VDMOS | John Louis Moll | HP Labs | [76] |
? | ? | LDMOS | ? | Hitachi | [83] | |
July 1979 | ? | ? | IGBT | Bantval Jayant Baliga, Margaret Lazeri | General Electric | [84] |
December 1984 | 2000 | ? | BiCMOS | H. Higuchi, Goro Kitsukawa, Takahide Ikeda, Y. Nishio | Hitachi | [85] |
May 1985 | 300 | ? | ? | K. Deguchi, Kazuhiko Komatsu, M. Miyake, H. Namatsu | Nippon Telegraph and Telephone | [86] |
February 1985 | 1000 | ? | BiCMOS | H. Momose, Hideki Shibata, S. Saitoh, Jun-ichi Miyamoto | Toshiba | [87] |
November 1986 | 90 | 8.3 | ? | Han-Sheng Lee, L.C. Puzio | General Motors | [88] |
December 1986 | 60 | ? | ? | Ghavam G. Shahidi, Dimitri A. Antoniadis, Henry I. Smith | MIT | [89][20] |
May 1987 | ? | 10 | ? | Bijan Davari, Chung-Yu Ting, Kie Y. Ahn, S. Basavaiah | IBM T.J. Watson Research Center | [90] |
December 1987 | 800 | ? | BiCMOS | Robert H. Havemann, R. E. Eklund, Hiep V. Tran | Texas Instruments | [91] |
June 1997 | 30 | ? | EJ-MOSFET | Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba | NEC | [92] |
1998 | 32 | ? | ? | ? | NEC | [27] |
1999 | 8 | ? | ? | ? | ||
April 2000 | 8 | ? | EJ-MOSFET | Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba | NEC | [93] |
Main article: 10 μm process |
Main article: 6 μm process |
Main article: 3 μm process |
Main article: 1.5 μm process |
Main article: 1 μm process |
Main article: 800 nm process |
Main article: 600 nm process |
Main article: 350 nm process |
Main article: 250 nm process |
Main article: 180 nm process |
Main article: 130 nm process |
See also: Nanoelectronics and Nanocircuitry |
Main article: 90 nm process |
Main article: 65 nm process |
Main article: 45 nm process |
Main article: 32 nm process |
Main article: 22 nm process |
Main article: 14 nm process |
Main article: 10 nm process |
Main article: 7 nm process |
Main article: 5 nm process |
Main article: 3 nm process |