Indium arsenide[1]
IUPAC name
Indium(III) arsenide
Other names
Indium monoarsenide
3D model (JSmol)
ECHA InfoCard 100.013.742 Edit this at Wikidata
  • InChI=1S/As.In checkY
  • InChI=1/As.In/rAsIn/c1-2
  • [In+3].[As-3]
  • [In]#[As]
Molar mass 189.740 g/mol
Density 5.67 g/cm3
Melting point 942 °C (1,728 °F; 1,215 K)
Band gap 0.354 eV (300 K)
Electron mobility 40000 cm2/(V*s)
Thermal conductivity 0.27 W/(cm*K) (300 K)
Zinc Blende
a = 6.0583 Å
47.8 J·mol−1·K−1
75.7 J·mol−1·K−1
-58.6 kJ·mol−1
GHS labelling:
H301, H331[2]
P261, P301+P310, P304+P340, P311, P405, P501[2]
NFPA 704 (fire diamond)
Safety data sheet (SDS) External SDS
Related compounds
Other anions
Indium nitride
Indium phosphide
Indium antimonide
Other cations
Gallium arsenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.[3]

Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.

Indium arsenide is similar to gallium arsenide and is a direct bandgap material.

Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. Indium arsenide is sometimes alloyed with indium phosphide and Indium antimonide to create a quaternary alloy with a range of band gaps that depend on the different concentration ratios of its components (InP, InAs and InSb), such quaternary alloys was under extensive theoretical studies to study the effect of pressure on its properties.[4]

InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter.

Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to formation of the quantum dots.[5] Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.

The optoelectronic properties and phonon vibrations are slightly change under the effect of temperature over the range form 0 K to 500 K.[6]


  1. ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 4–61, ISBN 0-8493-0594-2
  2. ^ a b c d "Indium Arsenide". American Elements. Retrieved October 12, 2018.
  3. ^ "Thermal properties of Indium Arsenide (InAs)". Retrieved 2011-11-22.
  4. ^ Degheidy, A. R.; AbuAli, A. M.; Elkenany, Elkenany. B. (2021-05-18). "Phonon frequencies, mechanical and optoelectronic properties for InPxAsySb1-x-y/InAs alloys under the influence of pressure". Applied Physics A. 127 (6): 429. doi:10.1007/s00339-021-04551-4.
  5. ^ "oe magazine - eye on technology". Archived from the original on 2006-10-18. Retrieved 2011-11-22.
  6. ^ Degheidy, Abdel Razik; Elkenany, Elkenany Brens; Madkour, Mohamed Abdel Kader; Abuali, Ahmed. M. (2018-09-01). "Temperature dependence of phonons and related crystal properties in InAs, InP and InSb zinc-blende binary compounds". Computational Condensed Matter. 16: e00308. doi:10.1016/j.cocom.2018.e00308.