Aluminium indium antimonide, also known as indium aluminium antimonide or AlInSb (AlxIn1-xSb), is a ternary III-V semiconductor compound. The alloy can contain any ratio between aluminium and indium; that is, x in the formula can continuously take on any value between 0 and 1. AlInSb refers generally to any composition of the alloy.
The bandgap and lattice constant of AlInSb alloys are between those of pure AlSb (a = 0.614 nm, Eg = 1.62 eV) and InSb (a = 0.648 nm, Eg = 0.17 eV).[1] At an intermediate composition (approximately x = 0.73), the bandgap transitions from an indirect gap, like that of pure AlSb, to a direct gap, like that of pure InSb.[2]
AlInSb films have been grown by molecular beam epitaxy and metalorganic chemical vapor deposition[3] on gallium arsenide and gallium antimonide substrates. It is typically incorporated into layered heterostructures with other III-V compounds.
AlInSb has been employed as a barrier material and dislocation filter for InSb quantum wells and in InSb-based devices.[4]
AlInSb has been used as the active region of LEDs and photodiodes to generate and detect light at mid-infrared wavelengths. These devices can be optimized for performance around 3.3 μm, a wavelength of interest for methane gas sensing.[5][6]