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((Short description|Japanese engineer (1929–2021)))
((Infobox scientist
| name              = Isamu Akasaki
| native_name       = 赤﨑 勇
| image             = Isamu Akasaki 201111.jpg
| caption           = Isamu Akasaki
| birth_date        = ((Birth date|1929|1|30))
| birth_place       = [[Chiran, Kagoshima|Chiran]], [[Kawanabe District, Kagoshima|Kawanabe District]], [[Kagoshima Prefecture]], [[Empire of Japan]] 
| death_date        = ((death date and age|2021|4|1|1929|1|30))
| death_place       =[[Nagoya]], [[Aichi]], Japan
| residence         =  
| citizenship       = 
| nationality       = [[Japanese people|Japanese]]
| fields            = [[Physics]], [[Engineering]]
| workplaces        = [[Meijo University]]<br>[[Nagoya University]]
| alma_mater        = [[Kyoto University]]<br>[[Nagoya University]]
| doctoral_advisor  = 
| academic_advisors = 
| doctoral_students = 
| notable_students  = 
| known_for         = 
| influences        = 
| influenced        = 
| awards            = [[Asahi Prize]] ((small|(2001)))<br>[[Takeda Award]] ((small|(2002)))<br>[[Kyoto Prize]] ((small|(2009)))<br>[[IEEE Edison Medal]] ((small|(2011)))<br>[[Nobel Prize in Physics]] ((small|(2014)))<br>[[Charles Stark Draper Prize]] ((small|(2015)))
| signature         = <!--(filename only)-->
| signature_alt     = 
| footnotes         = 
))

((Nihongo|'''Isamu Akasaki'''|赤﨑 勇|Akasaki Isamu|extra=January 30, 1929 – April 1, 2021)) was a Japanese engineer and physicist, specializing in the field of [[semiconductor]] technology and [[Nobel Prize]] laureate, best known for inventing the bright [[gallium nitride]] ([[GaN]]) p-n junction blue [[LED]] in 1989 and subsequently the high-brightness GaN blue LED as well.<ref>((cite journal |url=http://jjap.jsap.jp/link?JJAP/45/9001/|title=Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode |author1=Isamu Akasaki |author2=Hiroshi Amano |journal=Japanese Journal of Applied Physics  |doi= 10.1143/JJAP.45.9001 |year=2006 |volume=45 |issue=12 |pages=9001–9010 |bibcode=2006JaJAP..45.9001A |s2cid=7702696 |access-date=November 10, 2015|archive-url=https://web.archive.org/web/20120722041435/http://jjap.jsap.jp/link?JJAP%2F45%2F9001%2F|archive-date=July 22, 2012|url-status=dead))</ref><ref>((cite web|url=http://jjap.jsap.jp/link?JJAP/47/3781/|title=Japanese Journal of Applied Physics|work=jsap.jp|access-date=November 10, 2015|archive-url=https://web.archive.org/web/20120418221503/http://jjap.jsap.jp/link?JJAP%2F47%2F3781%2F|archive-date=April 18, 2012|url-status=dead))</ref><ref>((cite journal | last1=Amano | first1=Hiroshi | last2=Kito | first2=Masahiro | last3=Hiramatsu | first3=Kazumasa | last4=Akasaki | first4=Isamu | title=P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) | journal=Japanese Journal of Applied Physics | publisher=Japan Society of Applied Physics | volume=28 | issue=Part 2, No. 12 | date=December 20, 1989 | issn=0021-4922 | doi=10.1143/jjap.28.l2112 | pages=L2112–L2114| bibcode=1989JaJAP..28L2112A | doi-access=free ))</ref><ref>((cite journal | title=Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED | journal=Journal of Luminescence | publisher=Elsevier BV | volume=48-49 | year=1991 | issn=0022-2313 | doi=10.1016/0022-2313(91)90215-h | pages=666–670| last1=Isamu Akasaki | last2=Hiroshi Amano | last3=Masahiro Kito | last4=Kazumasa Hiramatsu | bibcode=1991JLum...48..666A ))</ref><ref>Isamu Akasaki, Hiroshi Amano, Kenji Itoh, Norikatsu Koide and Katsuhide Manabe: "GaN-based UV/blue light emitting devices", Inst. Phys. Conf. Ser. No.129, pp. 851-856, 1992</ref>

For this and other achievements, Akasaki was awarded the [[Kyoto Prize]] in Advanced Technology in 2009,<ref>((cite web|url=http://www.inamori-f.or.jp/laureates/k25_a_isamu/ctn_e.html|title=Kyoto Prize: Isamu Akasaki |publisher=Inamori Foundation |work=Inamori-f.or.jp|access-date=November 10, 2015|url-status=dead|archive-url=https://web.archive.org/web/20160304031242/http://www.inamori-f.or.jp/laureates/k25_a_isamu/ctn_e.html|archive-date=March 4, 2016|df=mdy-all))</ref> and the [[IEEE Edison Medal]] in 2011.<ref name="EdisonMedalRecipients">((cite web|url=http://www.ieee.org/documents/edison_rl.pdf |title=IEEE Jack S. Kilby Signal Processing Medal Recipients |publisher=[[IEEE]] |access-date=April 15, 2012))</ref> He was also awarded the 2014 Nobel prize in Physics, together with [[Hiroshi Amano]] and [[Shuji Nakamura]],<ref name=NobelPrize>((cite web|title=The 2014 Nobel Prize in Physics - Press Release|url=https://www.nobelprize.org/nobel_prizes/physics/laureates/2014/press.html|website=Nobelprize.org|publisher=Nobel Media AB 2014|access-date=October 7, 2014))</ref> "for the invention of efficient blue light-emitting diodes, which has enabled bright and energy-saving white light sources". In 2021, Akasaki, along with [[Shuji Nakamura]], [[Nick Holonyak]], [[M. George Craford]] and [[Russell D. Dupuis]] were awarded the [[Queen Elizabeth Prize for Engineering]] "for the creation and development of LED lighting, which forms the basis of all solid state lighting technology".<ref name=QEPrize>((Cite web|url=https://qeprize.org/winners/led-lighting|title=LED Lighting|website=Queen Elizabeth Prize for Engineering))</ref>

==Early life and education==
<!--[[File:Isamu Akasaki 20141211.jpg|thumb|left|200px|Isamu Akasaki]]-->
He was born in [[Chiran, Kagoshima|Chiran]], [[Kagoshima Prefecture]] and raised in [[Kagoshima]] City.<ref name=interviewKU>((Cite web |url=http://www.kyoto-u.ac.jp/ja/about/history/honor/award_b/nobel/2015/akasaki/interview.html |title= ノーベル物理学賞受賞者・赤﨑勇博士と京都大学 －大学時代に育まれた研究者の芽－ |language=ja |publisher=Kyoto University |access-date= 2021-09-05))</ref><ref name=Aoihikari>赤﨑勇(AKASAKI Isamu)"青い光に魅せられて 青色LED開発物語",Japan:日本経済新聞出版社([[Nikkei Business Publications]]),2013</ref> His elder brother is ((ill|Masanori Akazaki|ja|赤崎正則)) who was an electronic engineering researcher and a Professor Emeritus at [[Kyushu University]].((R|Aoihikari)) (Their surname "((Nihongo2|赤﨑))" is also pronounced Akazaki.<ref>((cite web |url=https://www.pref.aichi.jp/uploaded/attachment/379824.pdf |title=Asia University Summit pp.7-8 |year=2021 |website=Aichi Prefectural Government |page= |access-date=2022-06-27 ))</ref><ref>((cite web |url=https://ocw.kyoto-u.ac.jp/en/wp-content/uploads/sites/2/2015/07/2015_UNESCO_International_Scientific_Symposium_01.pdf |title=Welcome Speech by Juichi Yamagiwa, Dr. of Science, President of Kyoto University - UNESCO International Scientific Symposium Kyoto University, 16 July, 2015 |author=Juichi Yamagiwa |author-link=Juichi Yamagiwa |date=2015-07-16 |website=Kyoto University OCW (Open Course Ware) |publisher=Kyoto University |page=2 |access-date=2022-06-27 ))</ref>)

Isamu graduated from Kagoshima Prefectural Daini-Kagoshima Middle School (now [[Kagoshima Prefectural Konan High School]]) in 1946, from Seventh Higher School Zoshikan (now [[Kagoshima University]]) in 1949((R|Aoihikari)) and from  Department of Chemistry, Faculty of Science, [[Kyoto University]] in 1952.((R|interviewKU)) During his university years, he visited shrines and temples that local residents rarely visit, walked around the mountains of [[Shinshu]] during the summer vacation, enjoyed classes and enjoyed a fulfilling student era.((R|interviewKU)) After he became a researcher, he obtained the degree of [[Doctor of Engineering]] from [[Nagoya University]] in 1964.<ref>((Cite thesis |url=https://ci.nii.ac.jp/naid/500000432090 |title=赤崎 勇「Geの気相成長に関する研究」 |language=ja |website=CiNii |year=1964 |publisher=National Institute of Informatics (Japan) |access-date= 2022-06-27|type=PhD Thesis |last1=赤崎 ))</ref>

==Research==
Akasaki started working on [[GaN]]-based blue LEDs in the late 1960s. Step by step, he improved the quality of GaN crystals and [[Electronic component|device]] structures<ref>Y. Ohki, Y. Toyoda, H. Kobayasi and I. Akasaki: "Fabrication and properties of a practical blue-emitting GaN m-i-s diode. Inst. Phys. Conf. Ser. No. 63, pp. 479-484 (Proc. of the 9th Intl. Symposium on Gallium Arsenide and Related Compounds, 1981).</ref> at Matsushita Research Institute Tokyo, Inc. (MRIT), where he decided to adopt [[metalorganic vapor phase epitaxy]] (MOVPE) as the preferred growth method for GaN.

In 1981 he started afresh the growth of GaN by MOVPE at Nagoya University, and in 1985 he and his group succeeded in growing high-quality GaN on sapphire substrate by pioneering the low-temperature (LT) buffer layer technology.<ref>((cite journal | last1=Amano | first1=H. | last2=Sawaki | first2=N. | last3=Akasaki | first3=I. | last4=Toyoda | first4=Y. | title=Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer | journal=Applied Physics Letters | publisher=AIP Publishing | volume=48 | issue=5 | date=February 3, 1986 | issn=0003-6951 | doi=10.1063/1.96549 | pages=353–355| bibcode=1986ApPhL..48..353A ))</ref><ref>((cite journal | last1=Akasaki | first1=Isamu | last2=Amano | first2=Hiroshi |author-link2=Hiroshi Amano|last3=Koide | first3=Yasuo | last4=Hiramatsu | first4=Kazumasa | last5=Sawaki | first5=Nobuhiko | title=Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga<sub>1−x</sub>Al<sub>x</sub>N (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE | journal=Journal of Crystal Growth | publisher=Elsevier BV | volume=98 | issue=1–2 | year=1989 | issn=0022-0248 | doi=10.1016/0022-0248(89)90200-5 | pages=209–219))</ref>

This high-quality GaN enabled them to discover p-type GaN by doping with [[magnesium]] (Mg) and subsequent activation by electron irradiation (1989), to produce the first GaN p-n junction blue/UV LED (1989), and to achieve conductivity control of n-type GaN (1990)<ref>H. Amano and I. Akasaki: "Fabrication and Properties of GaN p-n Junction LED", Mater. Res. Soc. Extended Abstract (EA-21), pp.165-168, 1990, (Fall Meeting 1989)</ref> and related alloys (1991)<ref>((cite journal | last1=Murakami | first1=Hiroshi | last2=Asahi | first2=Tsunemori | last3=Amano | first3=Hiroshi | last4=Hiramatsu | first4=Kazumasa | last5=Sawaki | first5=Nobuhiko | last6=Akasaki | first6=Isamu | title=Growth of Si-doped Al<sub>x</sub>Ga<sub>1–x</sub>N on (0001) sapphire substrate by metalorganic vapor phase epitaxy | journal=Journal of Crystal Growth | publisher=Elsevier BV | volume=115 | issue=1–4 | year=1991 | issn=0022-0248 | doi=10.1016/0022-0248(91)90820-u | pages=648–651| bibcode=1991JCrGr.115..648M ))</ref> by doping with silicon (Si), enabling the use of hetero structures and multiple quantum wells in the design and structure of more efficient p-n junction light emitting structures.

They achieved stimulated emission from the GaN firstly at room temperature in 1990,<ref>((cite journal | last1=Amano | first1=Hiroshi | last2=Asahi | first2=Tsunemori | last3=Akasaki | first3=Isamu | title=Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer | journal=Japanese Journal of Applied Physics | publisher=Japan Society of Applied Physics | volume=29 | issue=Part 2, No. 2 | date=February 20, 1990 | issn=0021-4922 | doi=10.1143/jjap.29.l205 | pages=L205–L206| bibcode=1990JaJAP..29L.205A | s2cid=120489784 ))</ref> and developed in 1995 the stimulated emission at 388&nbsp;nm with pulsed current injection from high-quality AlGaN/GaN/GaInN quantum well device.<ref>((cite journal | last1=Akasaki | first1=Isamu | last2=Amano | first2=Hiroshi | last3=Sota | first3=Shigetoshi | last4=Sakai | first4=Hiromitsu | last5=Tanaka | first5=Toshiyuki | last6=Koike | first6=Masayoshi | title=Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device | journal=Japanese Journal of Applied Physics | publisher=Japan Society of Applied Physics | volume=34 | issue=11B | date=November 1, 1995 | issn=0021-4922 | doi=10.7567/jjap.34.l1517 | page=L1517–L1519| bibcode=1995JaJAP..34L1517A | s2cid=122963134 ))</ref> They verified quantum size effect (1991)<ref>((cite journal | last1=Itoh | first1=Kenji | last2=Kawamoto | first2=Takeshi | last3=Amano | first3=Hiroshi | last4=Hiramatsu | first4=Kazumasa | last5=Akasaki | first5=Isamu | title=Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures | journal=Japanese Journal of Applied Physics | publisher=Japan Society of Applied Physics | volume=30 | issue=Part 1, No. 9A | date=September 15, 1991 | issn=0021-4922 | doi=10.1143/jjap.30.1924 | pages=1924–1927| bibcode=1991JaJAP..30.1924I | s2cid=123428785 ))</ref> and quantum confined Stark effect (1997)<ref>((cite journal | last1=Takeuchi | first1=Tetsuya | last2=Sota | first2=Shigetoshi | last3=Katsuragawa | first3=Maki | last4=Komori | first4=Miho | last5=Takeuchi | first5=Hideo | last6=Amano | first6=Hiroshi | last7=Akasaki | first7=Isamu | title=Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells | journal=Japanese Journal of Applied Physics | publisher=Japan Society of Applied Physics | volume=36 | issue=Part 2, No. 4A | date=April 1, 1997 | issn=0021-4922 | doi=10.1143/jjap.36.l382 | pages=L382–L385| bibcode=1997JaJAP..36L.382T | s2cid=95930600 ))</ref> in nitride system, and in 2000 showed theoretically the orientation dependence of piezoelectric field and the existence of non-/semi-polar GaN crystals,<ref>((cite journal | last1=Takeuchi | first1=Tetsuya | last2=Amano | first2=Hiroshi | last3=Akasaki | first3=Isamu | title=Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells | journal=Japanese Journal of Applied Physics | publisher=Japan Society of Applied Physics | volume=39 | issue=Part 1, No. 2A | date=February 15, 2000 | issn=0021-4922 | doi=10.1143/jjap.39.413 | pages=413–416| bibcode=2000JaJAP..39..413T | s2cid=121954273 ))</ref> which have triggered today's worldwide efforts to grow those crystals for application to more efficient light emitters.

==Nagoya University Akasaki Institute==
((More citations needed section|date=April 2021))
[[File:赤崎記念研究館.jpg|thumb|Akasaki Institute]]
Akasaki's patents were produced from these inventions, and the patents have been rewarded as royalties. Nagoya University Akasaki Institute<ref>((cite web |url=http://www.nagoya-u.ac.jp/en/about-nu/pdf/profile2008_en.pdf |website=nagoya-u.ac.jp |title=Nagoya University profile 2008 |archive-url=https://web.archive.org/web/20121017215447/http://www.nagoya-u.ac.jp/en/about-nu/pdf/profile2008_en.pdf |archive-date=October 17, 2012 ))</ref> opened on October 20, 2006. The cost of construction of the institute was covered with the patent royalty income to the university, which was also used for a wide range of activities in Nagoya University. The institute consists of an LED gallery to display the history of blue LED research/developments and applications, an office for research collaboration, laboratories for innovative research, and Akasaki's office on the top sixth floor. The institute is situated in the center of the collaboration research zone in Nagoya University Higashiyama campus.

==Professional record==
((Unreferenced section|date=April 2021))
[[File:Isamu Akasaki and Seiji Morimoto 2014.jpg|thumb|200px|with [[:ja:森元誠二|Seiji Morimoto]] (in [[Sweden]])]]

Akasaki worked as a Research Scientist from 1952 to 1959 at Kobe Kogyo Corporation (now, [[Fujitsu|Fujitsu Ltd.]]).<ref name=eb>((cite encyclopedia |url=https://www.britannica.com/biography/Isamu-Akasaki |encyclopedia=Encyclopedia Britannica |title=Akasaki Isamu |access-date=7 April 2021))</ref> In 1959 he was a research associate, assistant professor, and associate professor at the Department of Electronics at [[Nagoya University]] until 1964. Later in 1964, he was the Head of Basic Research Laboratory at Matsushita Research Institute Tokyo, Inc. until 1974 to later become a General Manager of Semiconductor Department (in the same institute until 1981).((citation needed|date=April 2021)) In 1981 he became a professor in the Department of Electronics at Nagoya University until 1992.<ref name=eb/>

From 1987 to 1990 he was a Project Leader of "Research and Development of GaN-based Blue Light–Emitting Diode" sponsored by [[Japan Science and Technology Agency]] (JST). He then led the "Research and Development of GaN-based 
Short-Wavelength Semiconductor Laser Diode" product sponsored by JST from 1993 to 1999. While he led this project, he was also a visiting professor at the Research Center for Interface Quantum Electronics at [[Hokkaido University]], from 1995 to 1996. In 1996 he was a Project Leader of the Japan Society for the Promotion of Science's  for the "Future program" up to 2001. From 1996 he started as a Project Leader of "High-Tech Research Center for Nitride Semiconductors" at [[Meijo University]], sponsored by MEXT until 2004. From 2003 up to 2006 he was the Chairman of "R&D Strategic Committee on the Wireless Devices Based on Nitride Semiconductors" sponsored by METI.

He continued working as a Professor Emeritus of Nagoya University, Professor of Meijo University from 1992.<ref name=eb/> He was also the Director of the Research Center for Nitride Semiconductors at Meijo University since 2004. He also worked as a Research Fellow at Akasaki Research Center of Nagoya University from 2001.

==Death==

Akasaki died of [[pneumonia]], on April 1, 2021, aged 92.<ref>((cite web|url=https://www.nippon.com/en/news/yjj2021040200887/|website=nippon.com|title=Nobel-Winning Scientist Isamu Akasaki Dies at 92|date=April 2, 2021|access-date=April 2, 2021|archive-date=April 2, 2021|archive-url=https://web.archive.org/web/20210402143131/https://www.nippon.com/en/news/yjj2021040200887/|url-status=dead))</ref>

==Honors and awards==

===Scientific and academic===
[[File:Shuji Nakamura Hiroshi Amano and Isamu Akasaki 20141208.jpg|thumb|200px|With [[Shuji Nakamura]] and [[Hiroshi Amano]] (at the [[Grand Hôtel (Stockholm)|Grand Hôtel]] on December 8, 2014)]]

((div col|colwidth=35em))
* 1989 – Japanese Association for Crystal Growth (JACG) Award
* 1991 – Chu-Nichi Culture Award<ref>((cite web|url=http://www.chunichi.co.jp/info/award/culture/index.html|title=中日文化賞|work=中日新聞 CHUNICHI Web))</ref>
* 1994 – Technological Contribution Award, Japanese Association for Crystal Growth in commemoration of its 20th anniversary
* 1995 – Heinrich Welker Gold Medal, the International Symposium on Compound Semiconductors
* 1996 – Engineering Achievement Award, the Institute of Electrical and Electronics Engineers / Lasers Electro-Optics Society
* 1998 – Inoue Harushige Award, Japan Science and Technology Agency
* 1998 – [[C&C Prize]], the Nippon Electric Company Corporation<ref>((cite web|url=http://www.nec.co.jp/press/en/9811/0401.html|title=NEC: News Release 98/11/04-01|work=Nec.co.jp|access-date=November 10, 2015))</ref>
* 1998 – Laudise Prize, the International Organization for Crystal Growth<ref>((cite web|url=http://www.iocg.org/prizes/frank_laudise_prize.html|title=International Organization for Crystal Growth|work=Iocg.org|access-date=November 10, 2015|archive-date=July 21, 2014|archive-url=https://web.archive.org/web/20140721054619/http://www.iocg.org/prizes/frank_laudise_prize.html|url-status=dead))</ref>
* 1998 – Jack A. Morton Award, the Institute of Electrical and Electronics Engineers<ref>((cite web|url=http://www.ieee.org/documents/morton_rl.pdf |website=ieee.org |title=IEEE JACK A. MORTON AWARD RECIPIENT |access-date=January 7, 2014 |url-status=dead |archive-url=https://web.archive.org/web/20141013182218/http://www.ieee.org/documents/morton_rl.pdf |archive-date=October 13, 2014 ))</ref>
* 1998 – [[Rank Prize]], the Rank Prize Foundation<ref>[http://www.rankprize.org/opto-electronics1.htm ] ((webarchive |url=https://web.archive.org/web/20121213162814/http://www.rankprize.org/opto-electronics1.htm |date=December 13, 2012 ))</ref>
* 1999 – Fellow, the Institute of Electrical and Electronics Engineers<ref>((cite web|url=http://www.ieee.org/membership_services/membership/fellows/chronology/fellows_1999.html |title=Fellow Class of 1999 |website=ieee.org |access-date=February 23, 2013 |url-status=dead |archive-url=https://web.archive.org/web/20121226163602/http://www.ieee.org/membership_services/membership/fellows/chronology/fellows_1999.html |archive-date=December 26, 2012 ))</ref>
* 1999 – [[Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology]], the Electrochemical Society<ref>((cite web|url=http://www.electrochem.org/awards/ecs/recipients/ssst_recipients.htm|title=ECS SSS&T Award|work=Electrochem.org|access-date=November 10, 2015|archive-url=https://web.archive.org/web/20141012005135/http://www.electrochem.org/awards/ecs/recipients/ssst_recipients.htm|archive-date=October 12, 2014|url-status=dead))</ref>
* 1999 – Honoris Causa Doctorate, the University of Montpellier II
* 1999 – Toray Science and Technology Prize, Toray Science Foundation<ref>((cite web|url=http://www.toray.com/tsf/kagaku/kag_004.html|title=Toray Science and Technology Prize : List of Winners|work=Toray.com|access-date=November 10, 2015|archive-date=October 13, 2014|archive-url=https://web.archive.org/web/20141013025235/http://www.toray.com/tsf/kagaku/kag_004.html|url-status=dead))</ref>
* 2001 – [[Asahi Prize]], the Asahi Shinbun Cultural Foundation<ref>((cite web|url=http://www.asahi.com/shimbun/award/asahi/english.html#winners2009|title=The Asahi Shimbun Company - The Asahi Prize - English Information|author=The Asahi Shimbun Company|work=Asahi.com|access-date=November 10, 2015))</ref>
* 2001 – Honoris Causa Doctorate, Linkoping University
* 2002 – Outstanding Achievement Award, the Japan Society of Applied Physics
* 2002 – [[Fujihara Award]], the Fujihara Foundation of Science<ref>((cite web |url=http://www.nipponpapergroup.com/e/csr/fujiwara.html |title=Assistance to the Fujiwara Foundation of Science(Nippon Paper Industries Co., LTD.) &#124; Nippon Paper Group |access-date=March 1, 2013 |url-status=dead |archive-url=https://archive.today/20130411133325/http://www.nipponpapergroup.com/e/csr/fujiwara.html |archive-date=April 11, 2013 |df=mdy-all ))</ref>
* 2002 – [[Takeda Award]], the Takeda Foundation<ref>((cite web|url=http://www.takeda-foundation.jp/en/award/takeda/2002/recipient/01.html |title=Social/Economic Well-Being : Technical Achievement: The Development of Blue Light Emitting Semiconductor Devices - Development of the blue light emitting diode and laser diode is the final link in completing the light spectrum for semiconductor devices |publisher=Takeda-foundation.jp |access-date=November 10, 2015))</ref>
* 2003 – President's Award, the Science Council of Japan (SCJ)<ref>((cite web|url=http://www.interacademies.net/About.aspx|title=IAP - About IAP|work=Interacademies.net|access-date=November 10, 2015))</ref>
* 2003 – Solid State Devices & Materials (SSDM) Award
* 2004 – Tokai TV Culture Prize
* 2004 – University Professor, Nagoya University
* 2006 – [[John Bardeen Award]], the Minerals, Metals & Materials Society<ref>((cite web|url=http://www.tms.org/Society/Honors/2006/Bardeen2006.html|title=Recipient: 2006 John Bardeen Award|work=Tms.org|access-date=November 10, 2015|url-status=dead|archive-url=https://web.archive.org/web/20160304113546/http://www.tms.org/Society/Honors/2006/Bardeen2006.html|archive-date=March 4, 2016|df=mdy-all))</ref>
* 2006 – Outstanding Achievement Award, the Japanese Association for Crystal Growth
* 2007 – Honorable Lifetime Achievement Award, the 162nd Research Committee on  Wide Bandgap Semiconductor Photonic and Electronic Devices, Japan Society for the Promotion of Science (JSPS)
* 2008 – Foreign Associate, the US National Academy of Engineering<ref>((cite web|url=http://www.nae.edu/MembersSection/Directory20412/31054.aspx|title=NAE Website - Dr. Isamu Akasaki|work=Nae.edu|access-date=November 10, 2015))</ref>
* 2009 – [[Kyoto Prize]] Advanced Technology, the Inamori Foundation<ref>((cite web|url=http://www.inamori-f.or.jp/laureates/k25_a_isamu/prf_e.html|title=INAMORI FOUNDATION|work=Inamori-f.or.jp|access-date=November 10, 2015|url-status=dead|archive-url=https://web.archive.org/web/20160304031246/http://www.inamori-f.or.jp/laureates/k25_a_isamu/prf_e.html|archive-date=March 4, 2016|df=mdy-all))</ref>
* 2010 – Lifetime Professor, Meijo University
* 2011 – [[Edison Medal]], the Institute of Electrical and Electronics Engineers<ref name="EdisonMedalRecipients"/>
* 2011 – Special Award for Intellectual Property Activities, the [[Japan Science and Technology Agency]]<ref>((cite web|url=https://www.jst.go.jp/report/2011/110915.html |date=September 13, 2011 |title=トピックス / 赤﨑勇・名城大学大学院理工学研究科教授および名古屋大学特別教授へ知的財産特別貢献賞を授与 |trans-title=Topics / Special Award for Intellectual Property Activities goes to Prof. Isamu Akasaki |language=ja |website=[[Japan Science and Technology Agency|JST]] |access-date=April 8, 2011 ))</ref>
* 2011 – Minami-Nippon Culture Prize-Honorable Prize
* 2014 – [[Nobel Prize in Physics]] together with [[Hiroshi Amano]] and [[Shuji Nakamura]]<ref name=NobelPrize />
* 2015 – [[Charles Stark Draper Prize]]<ref name=eb/>
* 2015 – [[Asia Game Changer Award]]<ref>((cite web|url=https://economictimes.indiatimes.com/news/company/corporate-trends/chanda-kochhar-among-three-indians-get-asia-game-changer-awards/articleshow/48991265.cms|title=Chanda Kochhar among three Indians get Asia Game Changer awards|author=<!--Not stated-->|date=September 16, 2015|work=[[The Economic Times]]|url-status=live|archive-url=https://web.archive.org/web/20150921083939/https://economictimes.indiatimes.com/news/company/corporate-trends/chanda-kochhar-among-three-indians-get-asia-game-changer-awards/articleshow/48991265.cms|archive-date=September 21, 2015|access-date=October 28, 2020))</ref>
* 2016 – [[UNESCO]] Medal for contributions to the development of nanoscience and nanotechnologies ceremony<ref>((cite web|url=https://en.unesco.org/news/fifth-unesco-medals-contributions-development-nanoscience-and-nanotechnologies-ceremony
|date=February 2016 |title=Fifth UNESCO Medals for contributions to the development of nanoscience and nanotechnologies ceremony
|website=[[UNESCO]] |access-date=April 3, 2021))</ref>
* 2021 – [[Queen Elizabeth Prize for Engineering]]
((div col end))

===National===
[[File:Mitsuhiro Yanagida Isamu Akasaki Saiichi Nemura Toshiro Nara and Taichiro Mitani 20111103.jpg|thumb|200px|Akasaki received the [[Order of Culture]]. After that, they posed for the photo (at the East Garden of the [[Tokyo Imperial Palace]] on November 3, 2011).]]
* 1997 – Medal with Purple Ribbon, the Japanese Government<ref>((cite web|url=http://www8.cao.go.jp/shokun/en/types-of-medals.html|title=Types of Medals|work=cao.go.jp))</ref>
* 2002 – [[Order of the Rising Sun]], Gold Rays with Neck Ribbon, the Japanese Government<ref>((cite web|url=http://www8.cao.go.jp/shokun/en/orders-of-the-rising-sun.html|title=Orders of the Rising Sun|work=Cao.go.jp|access-date=November 10, 2015))</ref>
* 2004 – [[Person of Cultural Merit]], the Japanese Government
* 2011 – [[Order of Culture]], the Japanese Emperor<ref>((cite web|url=http://www8.cao.go.jp/shokun/en/order-of-culture.html|title=Order of Culture|work=Cao.go.jp|access-date=November 10, 2015))</ref><ref>((cite web |url=http://newsonjapan.com/html/newsdesk/article/92718.php |title=Novelist, LED developer awarded |access-date=March 1, 2013 |url-status=dead |archive-url=https://archive.today/20130411112745/http://newsonjapan.com/html/newsdesk/article/92718.php |archive-date=April 11, 2013 |df=mdy-all ))</ref><ref>((cite web|url=http://homepage1.nifty.com/kitabatake/biunka.html|title=M͎͎|work=Nifty.com|access-date=November 10, 2015|archive-url=https://web.archive.org/web/20160913205423/http://homepage1.nifty.com/kitabatake/biunka.html|archive-date=September 13, 2016|url-status=dead|df=mdy-all))</ref>

==See also==
* [[List of Japanese Nobel laureates]]
* [[List of Nobel laureates affiliated with Kyoto University]]

((clear))

==References==
((Reflist|colwidth=30em))

==Further reading==
*Insights & Enterprise in ''PHOTONICS SPECTRA'', 54, November 2004.
*''Materials Research Society Symposium Proceedings'', Volume 639 (2000), pp. xxiii–xxv.

==External links==
*[https://www.nobelprize.org/nobel_prizes/physics/laureates/2014/ Nobel Prize website]
*((Nobelprize))
*[http://www.compoundsemiconductor.net/csc/adminpanel/uploads/magazine_images/CompoundSemiconductor_Issue1.pdf Compound Semiconductor (pp.&nbsp;17–19)]((dead link|date=September 2017 |bot=InternetArchiveBot |fix-attempted=yes ))
*New York Times obituary: [https://www.nytimes.com/2021/04/06/science/isamu-akasaki-dead.html?referringSource=articleShare “Nobel winner lit up the world with LEDs”] (April 2021). 
*((cite journal |title=Spotlight on Nagoya |journal=Nature |date=October 7, 2009 |doi=10.1038/nj0264 |doi-access=free ))

((Nobel Prize in Physics))
((2014 Nobel Prize winners))
((Japanese Nobel laureates))
((Charles Stark Draper Prize))
((IEEE Edison Medal Laureates 2001-2025))

((Authority control))

((DEFAULTSORT:Akasaki, Isamu))
[[Category:1929 births]]
[[Category:2021 deaths]]
[[Category:Japanese nanotechnologists]]
[[Category:People from Kagoshima Prefecture]]
[[Category:Kyoto University alumni]]
[[Category:Academic staff of Nagoya University]]
[[Category:Light-emitting diode pioneers]]
[[Category:IEEE Edison Medal recipients]]
[[Category:Recipients of the Order of Culture]]
[[Category:Recipients of the Order of the Rising Sun, 3rd class]]
[[Category:Recipients of the Medal of Honor (Japan)]]
[[Category:Japanese Nobel laureates]]
[[Category:Nobel laureates in Physics]]
[[Category:Draper Prize winners]]
[[Category:Fellow Members of the IEEE]]
[[Category:Members of the Japan Academy]]
[[Category:Nagoya University alumni]]
[[Category:Kagoshima University alumni]]
[[Category:Foreign associates of the National Academy of Engineering]]
[[Category:Asia Game Changer Award winners]]
[[Category:Deaths from pneumonia in Japan]]
[[Category:Kyoto laureates in Advanced Technology]]

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